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Download Free sampleThe global Silicon Carbide Epitaxial Wafer market was valued at 158.33 Million USD in 2021 and will grow with a CAGR of 33.33% from 2021 to 2027, based on HNY Research newly published report.
The prime objective of Silicon Carbide Epitaxial Wafer Market is to provide the insights on the post COVID-19 impact wwhich will help market players in this field evaluate their business approaches. Also, Silicon Carbide Epitaxial Wafer Market covers market segmentation by major market verdors, types, applications/end users and geography(North America, East Asia, Europe, South Asia, Southeast Asia, Middle East, Africa, Oceania, South America).
Epitaxial Wafer is made by adding multi-micrometer thick single silicon carbide crystal layers on top of a polished wafer. Precise control of thickness, doping (carrier concentration) and defect density is required to enable high yielding power devices from a semiconductor fabrication facility. Silicon Carbide Epitaxial Wafer is a wafer of Silicon Carbide made by epitaxial growth (called epitaxy) for use in making semiconductor and photonic device.The market for Silicon Carbide Epitaxial Wafer is concentrated with players such as Cree (Wolfspeed), II-VI Advanced Materials (Ascatron), Showa Denko K.K.(NSSMC), Epiworld intenational, SK Siltron(Dupont), TYSiC, STMicroelectronics (Norstel), ROHM (Sicrystal) and so on. Among them, the top 3 manufacturers which include Cree (Wolfspeed), II-VI Advanced Materials (Ascatron), Showa Denko K.K.(NSSMC) are the leader with about 71% revenue market share in 2019. We divide Silicon Carbide Epitaxial Wafer into 100 mm, 150 mm and 200 mm, 150 mm account for more than 60% revenue share in 2019. 600-1200V SiC Devices remains the largest application field, followed by 1200-3300V SiC Devices and above 3300V SiC Devices. North America is the largest production area, accounting for 53.38% of the total market share. The Asia-Pacific region is expected to grow faster in the future.
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