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Download Free sampleSiC for power electronics:Silicon carbide (SiC) is a growing alternative to silicon based electronics components especially in wide bandgap applications. The material offers a unique combination of greater power efficiency, smaller size, lighter weight and lower overall cost of the systems.Silicon Carbide could be the key to the future of sustainable energy. SiC power semiconductors can increase the efficiency of energy conversion, withstand higher voltages and currents, and withstand higher operating temperatures than conventional silicon-based devices. All of these factors offer essential advantages for devices such as data center power supplies, wind or solar power modules, and electric vehicle drive converters.
SiC Based Power Electronic Market contains market size and forecasts of SiC Based Power Electronic in global, including the following market information:
Global SiC Based Power Electronic Market Revenue, 2018-2023, 2023-2030, ($ millions)
Global SiC Based Power Electronic Market Sales, 2018-2023, 2023-2030, (K Units)
Global top five SiC Based Power Electronic companies in 2022 (%)
The global SiC Based Power Electronic market was valued at US$ million in 2022 and is projected to reach US$ million by 2030, at a CAGR of % during the forecast period 2023-2030.
The U.S. Market is Estimated at $ Million in 2022, While China is Forecast to Reach $ Million by 2030.
Silicon-based MOSFET Segment to Reach $ Million by 2030, with a % CAGR in next six years.
The global key manufacturers of SiC Based Power Electronic include STMicroelectronics, Cree, Inc., ON Semiconductor, ROHM CO., LTD., Infineon Technologies AG, NXP Semiconductor NV, ABB Group, Renesas Electronics Corporation and Fuji Electric Co, Ltd., etc. In 2022, the global top five players have a share approximately % in terms of revenue.
MARKET MONITOR GLOBAL, INC (MMG) has surveyed the SiC Based Power Electronic manufacturers, suppliers, distributors and industry experts on this industry, involving the sales, revenue, demand, price change, product type, recent development and plan, industry trends, drivers, challenges, obstacles, and potential risks.
Total Market by Segment:
Global SiC Based Power Electronic Market, by Type, 2018-2023, 2023-2030 ($ Millions) & (K Units)
Global SiC Based Power Electronic Market Segment Percentages, by Type, 2022 (%)
Silicon-based MOSFET
Silicon-based IGBT
Global SiC Based Power Electronic Market, by Application, 2018-2023, 2023-2030 ($ Millions) & (K Units)
Global SiC Based Power Electronic Market Segment Percentages, by Application, 2022 (%)
Automotive
Consumer Electronics
IT & Telecommunication
Aerospace & Defense
Others
Global SiC Based Power Electronic Market, By Region and Country, 2018-2023, 2023-2030 ($ Millions) & (K Units)
Global SiC Based Power Electronic Market Segment Percentages, By Region and Country, 2022 (%)
North America
US
Canada
Mexico
Europe
Germany
France
U.K.
Italy
Russia
Nordic Countries
Benelux
Rest of Europe
Asia
China
Japan
South Korea
Southeast Asia
India
Rest of Asia
South America
Brazil
Argentina
Rest of South America
Middle East & Africa
Turkey
Israel
Saudi Arabia
UAE
Rest of Middle East & Africa
Competitor Analysis
The report also provides analysis of leading market participants including:
Key companies SiC Based Power Electronic revenues in global market, 2018-2023 (Estimated), ($ millions)
Key companies SiC Based Power Electronic revenues share in global market, 2022 (%)
Key companies SiC Based Power Electronic sales in global market, 2018-2023 (Estimated), (K Units)
Key companies SiC Based Power Electronic sales share in global market, 2022 (%)
Further, the report presents profiles of competitors in the market, key players include:
STMicroelectronics
Cree, Inc.
ON Semiconductor
ROHM CO., LTD.
Infineon Technologies AG
NXP Semiconductor NV
ABB Group
Renesas Electronics Corporation
Fuji Electric Co, Ltd.
Mitsubishi Electric Corp.
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