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Download Free sampleThe global SiC Substrates market was valued at 218.84 Million USD in 2021 and will grow with a CAGR of 19.83% from 2021 to 2027, based on Research newly published report.
The prime objective of SiC Substrates Market is to provide the insights on the post COVID-19 impact which will help market players in this field evaluate their business approaches. Also, SiC Substrates Market covers market segmentation by major market verdors, types, applications/end users and geography(North America, East Asia, Europe, South Asia, Southeast Asia, Middle East, Africa, Oceania, South America).
Silicon carbide (SiC), also known as carborundum, is a compound of silicon and carbon with chemical formula SiC. Silicon carbide is a semiconductor, which can be doped n-type by nitrogen or phosphorus and p-type by beryllium, boron, aluminium, or gallium. Metallic conductivity has been achieved by heavy doping with boron, aluminium or nitrogen.SiC Substrates is a semiconductor material with unique electrical properties and excellent thermal properties , compared to silicon wafer and gallium arsenide wafer , SiC is more suitable for high temperatureand high power device .SiC Substrates can be supplied in diameter 2 inch , both 4-H or 6-H polytype N-type , Nitrogent doped , and Si face polished. It can be used in GaN epitaxy device, Optoelectronic device, High frequency device, High power device, High temperature device, Light emitting diodes.Currently, the global SiC wafer market is expensive, but still in short supply, high raw material costs 40 percent more than the price of silicon carbide semiconductor device, silicon carbide wafer price has become the bottleneck of the third-generation semiconductor industry. Thus, using the most advanced SiC crystal growth technology to achieve large-scale production, reduce production costs of silicon carbide wafers, will promote the rapid development of the third generation of the semiconductor industry, expanding market demand.
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